BLF248,112

Teknik Özellikler

Highest Frequency Band

VERY HIGH FREQUENCY BAND

Qualification Status

Not Qualified

Max Power Dissipation

500 W

Drain Currentmax Id

25 A

Max Output Power

300 W

Input Capacitance

500 pF

Element Configuration

Dual

Max Frequency

225 MHz

Maximum Drain Source Voltage V

65

Montaj

Screw

Package Shape

RECTANGULAR

ECCN Kodu

EAR99

Ihs Manufacturer

NXP SEMICONDUCTORS

Output Power

300 W

Package Description

FLANGE MOUNT, R-CDFM-F4

Case Connection

SOURCE

Min. Çalışma Sıcaklığı

-65 °C

Typical Power Gain Db

13

Parça Durumu

Obsolete

Drain To Source Resistance

150 mΩ

RoHS Durumu

Non-RoHS Compliant

Maximum Drain Source Resistance Mohm

150@10V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Jesd30 Code

R-CDFM-F4

Current Rating Amps

25A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Kılıf / Paket

SOT-262A1

Transistor Application

AMPLIFIER

Channel Mode

Enhancement

Voltage Test

28V

Akım Değeri

25 A

Pin Sayısı

5

Additional Feature

HIGH RELIABILITY

Power Output

300W

Pin Sayısı

5

Maximum Frequency Mhz

225

Typical Output Capacitance Vds Pf

360@28V

Terminal Pozisyonu

DUAL

Power Gainmin Gp

10 dB

Mounting

Screw