BLF202,115

Teknik Özellikler

Current Test

20mA

Package Style

SMALL OUTLINE

Aec Qualified

Unknown

Yayın Yılı

1999

Nominal Gerilim

40V

Output Power W

2

Üretici Parça No

BLF202,115

Typical Input Capacitance Vds Pf

5.3@12.5V

Risk Rank

5.77

Transistor Element Material

SILICON

Power Dissipationmax Abs

5.7 W

Pcb Changed

8

Terminal Formu

GULL WING

Mounting

Surface Mount

Minimum Operating Temperature C

-65

Package Body Material

CERAMIC, METAL-SEALED COFIRED

Ds Breakdown Voltagemin

40 V

Typical Drain Efficiency

55

Gain

13dB

Number Of Terminals

8

Maximum Gate Source Voltage V

±20

Number Of Elements Per Chip

1

Brand Name

NXP Semiconductor

REACH Uyumluluk Kodu

unknown

Power Gainmin Gp

10 dB

Terminal Pozisyonu

DUAL

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Typical Forward Transconductance S

0.135

Typical Output Capacitance Vds Pf

7.8@12.5V

Power Output

2W

Maximum Continuous Drain Current A

1

Maximum Vswr

50

Maximum Frequency Mhz

175

Number Of Elements

1

Pin Sayısı

8

Kılıf / Paket

SOT-409A

Polaritychannel Type

N-CHANNEL

Drain Currentmax Abs Id

1 A

Transistor Application

AMPLIFIER

Eccn Us

EAR99