NTMD6N02R2G

Teknik Özellikler

Element Configuration

Dual

Yüzey Montaj

YES

Operating Mode

ENHANCEMENT MODE

Çalışma Sıcaklığı

-55°C ~ 150°C (TJ)

Yükseklik

1.5mm

Transistor Application

SWITCHING

Rds On Max Id Vgs

35 mOhm @ 6A, 4.5V

Nominal Vgs

900 mV

Direnç

35MOhm

Uzunluk

5mm

Lead Free Status Rohs Status

Lead free / RoHS Compliant

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Current Continuous Drain Id25

3.92A

Other Names

NTMD6N02R2GOS NTMD6N02R2GOS-ND NTMD6N02R2GOSTR

Contact Plating

Tin

Gate Charge Qg Max Vgs

20nC @ 4.5V

Gate To Source Voltage Vgs

12V

ECCN Kodu

EAR99

Drain To Source Voltage Vdss

20V

Transistor Element Material

SILICON

Additional Feature

LOGIC LEVEL COMPATIBLE

JESD-609 Kodu

e3

Number Of Elements

2

Turn On Delay Time

12 ns

Avalanche Energy Rating Eas

360 mJ

Drain To Source Breakdown Voltage

20V

Montaj Tipi

Surface Mount

Power Dissipation

2W

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Power Max

730mW

Tepe Reflow Sıcaklığı (°C)

260

Fabrika Tedarik Süresi

45 Weeks

Terminal Sayısı

8

Max Power Dissipation

2W

Rise Time

50ns

Radyasyon Dayanımı

No

Pin Sayısı

8

Fet Feature

Logic Level Gate

Terminal Formu

GULL WING

Akım Değeri

6A