AON6912A

Teknik Özellikler

Fet Type

2 N-Channel (Half Bridge)

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Çalışma Sıcaklığı

-55°C~150°C TJ

Drain To Source Voltage Vdss

30V

Fet Feature

Logic Level Gate

Rds On Max Id Vgs

13.7m Ω @ 10A, 10V

RoHS Durumu

ROHS3 Compliant

Gate To Source Voltage Vgs

20V

Operating Mode

ENHANCEMENT MODE

Fabrika Tedarik Süresi

18 Weeks

Montaj Tipi

Surface Mount

Number Of Elements

2

Yayın Yılı

2011

Max Power Dissipation

2.1W

Continuous Drain Current Id

13.8A

Input Capacitance Ciss Max Vds

910pF @ 15V

Current Continuous Drain Id25

10A 13.8A

Gate Charge Qg Max Vgs

17nC @ 10V

Kılıf / Paket

8-PowerVDFN

Ambalaj

Tape & Reel (TR)

Pin Sayısı

8

Vgsth Max Id

2.5V @ 250μA

Parça Durumu

Active

Power Max

1.9W 2.1W

Montaj

Surface Mount

Nem Hassasiyeti (MSL)

1 (Unlimited)