AON5802BL

Teknik Özellikler

Gate Charge Qg Max Vgs

24nC @ 10V

Fet Type

2 N-Channel (Dual) Common Drain

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Kılıf / Paket

6-VFDFN Exposed Pad

Çalışma Sıcaklığı

-55°C~150°C TJ

Power Dissipationmax Abs

1.6W

Drain To Source Voltage Vdss

30V

Fet Feature

Standard

Rds On Max Id Vgs

19m Ω @ 7A, 4.5V

RoHS Durumu

Non-RoHS Compliant

Operating Mode

ENHANCEMENT MODE

Ambalaj

Tape & Reel (TR)

Yüzey Montaj

YES

Vgsth Max Id

1.5V @ 250μA

Montaj Tipi

Surface Mount

Yayın Yılı

2013

Parça Durumu

Obsolete

Power Max

1.6W

Drain Currentmax Abs Id

7.2A

Input Capacitance Ciss Max Vds

1150pF @ 15V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Current Continuous Drain Id25

7.2A Tc