AOB5B65M1

Teknik Özellikler

Max Power Dissipation

83W

Jesd30 Code

R-PSSO-G2

Switching Energy

80μJ (on), 70μJ (off)

Transistor Element Material

SILICON

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Nem Hassasiyeti (MSL)

1 (Unlimited)

Giriş Tipi

Standard

Terminal Formu

GULL WING

Terminal Pozisyonu

SINGLE

Collectoremitter Breakdown Voltage

650V

Max Breakdown Voltage

650V

Seri

Alpha IGBT™

Reverse Recovery Time

195 ns

Case Connection

COLLECTOR

Ambalaj

Tape & Reel (TR)

Montaj Tipi

Surface Mount

Turn On Time

21 ns

Parça Durumu

Active

RoHS Durumu

ROHS3 Compliant

Power Max

83W

Montaj

Surface Mount

Vceon Max Vge Ic

1.98V @ 15V, 5A

Td Onoff25c

8.5ns/106ns

Kurşunsuz Kodu

yes

Collector Emitter Voltage Vceo

1.98V

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Çalışma Sıcaklığı

-55°C~175°C TJ

Polaritychannel Type

N-CHANNEL

Gate Charge

14nC

Terminal Sayısı

2

Turn Off Timenom Toff

161 ns

Yayın Yılı

2011

Fabrika Tedarik Süresi

18 Weeks

Max Collector Current

10A

Configuration

SINGLE WITH BUILT-IN DIODE

Test Conditions

400V, 5A, 60 Ω, 15V

Number Of Elements

1

Current Collector Pulsed Icm

15A

Transistor Application

POWER CONTROL

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED