AO4629

Teknik Özellikler

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Drain To Source Voltage Vdss

30V

Operating Mode

ENHANCEMENT MODE

Feedback Capmax Crss

50 pF

Kurşunsuz

Lead Free

Max Power Dissipation

2W

RoHS Durumu

ROHS3 Compliant

Continuous Drain Current Id

5.5A

Montaj

Surface Mount

Kurşunsuz Kodu

yes

Çalışma Sıcaklığı

-55°C~150°C TJ

Input Capacitance Ciss Max Vds

310pF @ 15V

Transistor Application

SWITCHING

Vgsth Max Id

2.4V @ 250μA

Ambalaj

Tape & Reel (TR)

Terminal Pozisyonu

DUAL

Parça Durumu

Active

Fabrika Tedarik Süresi

18 Weeks

Transistor Element Material

SILICON

Nem Hassasiyeti (MSL)

1 (Unlimited)

Radyasyon Dayanımı

No

Pin Sayısı

8

Fet Feature

Logic Level Gate

Montaj Tipi

Surface Mount

Drain Currentmax Abs Id

6A

Drainsource On Resistancemax

0.03Ohm

ECCN Kodu

EAR99

Current Continuous Drain Id25

6A 5.5A

Ds Breakdown Voltagemin

30V

Pin Sayısı

8

Terminal Formu

GULL WING

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Rds On Max Id Vgs

30m Ω @ 6A, 10V

Fet Type

N and P-Channel, Common Drain

Terminal Sayısı

8

Power Dissipation

2W

Gate Charge Qg Max Vgs

6.3nC @ 10V

Number Of Elements

2

Gate To Source Voltage Vgs

20V