AONS66917

Teknik Özellikler

Package Width

5.55

Seri

AlphaSGT™

Ppap

Unknown

Category

Power MOSFET

Çalışma Sıcaklığı

-55°C ~ 150°C (TJ)

Rds On Max Id Vgs

3.5mOhm @ 20A, 10V

Maximum Idss Ua

1

Channel Type

N

Maximum Gate Source Voltage V

±20

Current Continuous Drain Id25

100A (Tc)

Power Dissipation Max

6.2W (Ta), 215W (Tc)

Process Technology

AlphaSGT

Temel Ürün No

AONS669

Maximum Power Dissipation Mw

215000

Maximum Continuous Drain Current A

100

Tedarikçi Cihaz Paketi

8-DFN (5x6)

Typical Fall Time Ns

12

Minimum Operating Temperature C

-55

Maximum Drain Source Resistance Mohm

3.5@10V

Gate Charge Qg Max Vgs

115 nC @ 10 V

Pcb Changed

8

Typical Rise Time Ns

6.5

Channel Mode

Enhancement

Maximum Gate Threshold Voltage V

2.8

Drive Voltage Max Rds On Min Rds On

4.5V, 10V

Parça Durumu

Active

Typical Turnon Delay Time Ns

16.5

Package Length

5.2

Configuration

Single Quad Drain Triple Source

Drain To Source Voltage Vdss

100 V

Hts

8541.29.00.95

Fet Type

N-Channel

Typical Gate Charge Vgs Nc

80@10V|35@4.5V

Maximum Drain Source Voltage V

100

Typical Input Capacitance Vds Pf

5940@50V

Typical Gate Charge10v Nc

80

Input Capacitance Ciss Max Vds

5940 pF @ 50 V

Vgs Max

±20V

Ürün Durumu

Active

Montaj Tipi

Surface Mount