JANTXV2N6990

Teknik Özellikler

Vce Saturation Max Ib Ic

1V @ 50mA, 500mA

Fabrika Tedarik Süresi

23 Weeks

Nem Hassasiyeti (MSL)

1 (Unlimited)

Package Height

2.4(Max)

Supplier Temperature Grade

Military

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Lead Shape

Flat

Pin Sayısı

14

Maximum Dc Collector Current A

0.8

Qualification Status

Qualified

Maximum Collectoremitter Saturation Voltage V

0.3@15mA@150mA|1@50mA@500mA

Yayın Yılı

2002

Configuration

Quad

Maximum Collector Base Voltage V

75

Maximum Emitter Base Voltage V

6

ECCN Kodu

EAR99

Maximum Operating Temperature C

200

Montaj Tipi

Surface Mount

Eccn Us

EAR99

Current Collector Cutoff Max

10μA ICBO

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Parça Durumu

Active

Terminal Kaplaması

Tin/Lead (Sn/Pb)

Montaj

Surface Mount

Category

Bipolar Power

Dc Current Gain Hfe Min Ic Vce

100 @ 150mA 10V

Terminal Sayısı

14

Emitter Base Voltage Vebo

6V

Maximum Collectoremitter Voltage V

50

Tip

NPN

Minimum Dc Current Gain

50@0.1mA@10V|75@1mA@10V|100@10mA@10V|100@150mA@10V|30@500mA@10V

Supplier Package

FPAK

Maximum Power Dissipation Mw

400

Transistor Type

4 NPN (Quad)

Kılıf / Paket

14-Flatpack

Minimum Operating Temperature C

-65

Transistor Application

SWITCHING

Material

Si

Collector Emitter Voltage Vceo

50V

JESD-609 Kodu

e0