APT30M30B2FLL

Teknik Özellikler

Transistor Element Material

SILICON

Polaritychannel Type

N-CHANNEL

Power Dissipationmax Abs

694 W

Terminal Formu

THROUGH-HOLE

Operating Mode

ENHANCEMENT MODE

Jesd30 Code

R-PSIP-T3

ECCN Kodu

EAR99

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Avalanche Energy Rating Eas

3000 mJ

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Pin Sayısı

3

Yüzey Montaj

NO

Operating Temperaturemax

150 °C

REACH Uyumluluk Kodu

unknown

Transistor Application

SWITCHING

Part Life Cycle Code

Transferred

JESD-609 Kodu

e0

Package Style

IN-LINE

Case Connection

DRAIN

Package Body Material

PLASTIC/EPOXY

Package Shape

RECTANGULAR

Pulsed Drain Currentmax Idm

400 A

Drainsource On Resistancemax

0.03 Ω

Configuration

SINGLE WITH BUILT-IN DIODE

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Terminal Kaplaması

TIN LEAD

Terminal Pozisyonu

SINGLE

Qualification Status

Not Qualified

Drain Currentmax Id

100 A

Package Description

IN-LINE, R-PSIP-T3

Number Of Elements

1

Kurşunsuz Kodu

No

Rohs Code

No

Ihs Manufacturer

ADVANCED POWER TECHNOLOGY INC

Ds Breakdown Voltagemin

300 V

Number Of Terminals

3