AP4226GM-HF

Teknik Özellikler

Transistor Application

SWITCHING

Number Of Terminals

8

Package Shape

RECTANGULAR

Yüzey Montaj

YES

Package Body Material

PLASTIC/EPOXY

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Transistor Element Material

SILICON

Polaritychannel Type

N-CHANNEL

Drainsource On Resistancemax

0.018 Ω

Ds Breakdown Voltagemin

30 V

Package Description

SMALL OUTLINE, R-PDSO-G8

Drain Currentmax Id

8.2 A

ECCN Kodu

EAR99

Rohs Code

Yes

Jesd30 Code

R-PDSO-G8

Package Style

SMALL OUTLINE

Number Of Elements

2

Ihs Manufacturer

ADVANCED POWER ELECTRONICS CORP

Part Life Cycle Code

Contact Manufacturer

Terminal Pozisyonu

DUAL

Pulsed Drain Currentmax Idm

30 A

Terminal Formu

GULL WING

Moisture Sensitivity Levels

3

Operating Mode

ENHANCEMENT MODE

Additional Feature

ULTRA-LOW RESISTANCE

REACH Uyumluluk Kodu

compliant