ALD111933PAL

Teknik Özellikler

Input Capacitance Ciss Max Vds

2.5pF @ 5V

Rds On Max Id Vgs

500 Ω @ 5.9V

Kılıf / Paket

8-DIP (0.300, 7.62mm)

Fet Feature

Standard

Ambalaj

Tube

Power Dissipation

500mW

Parça Durumu

Active

Gate To Source Voltage Vgs

10.6V

Çalışma Sıcaklığı

0°C~70°C TJ

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgsth Max Id

3.35V @ 1μA

ECCN Kodu

EAR99

Montaj Tipi

Through Hole

Number Of Elements

2

Transistor Element Material

SILICON

Fet Type

2 N-Channel (Dual) Matched Pair

Fabrika Tedarik Süresi

8 Weeks

Terminal Sayısı

8

Continuous Drain Current Id

6.9mA

Operating Mode

ENHANCEMENT MODE

Yayın Yılı

2006

Seri

EPAD®

Turn Off Delay Time

10 ns

RoHS Durumu

ROHS3 Compliant

Max Power Dissipation

500mW

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Element Configuration

Dual

Kurşunsuz Kodu

yes

Drain To Source Breakdown Voltage

10V

Montaj

Through Hole

REACH Uyumluluk Kodu

unknown

Pin Sayısı

8

Transistor Application

SWITCHING