ALD111933MAL

Teknik Özellikler

Continuous Drain Current Id

6.9mA

Operating Mode

ENHANCEMENT MODE

Seri

EPAD®

Yayın Yılı

2006

Turn Off Delay Time

10 ns

Transistor Element Material

SILICON

Fet Type

2 N-Channel (Dual) Matched Pair

Fabrika Tedarik Süresi

10 Weeks

Terminal Sayısı

8

Drain To Source Breakdown Voltage

10V

Terminal Formu

GULL WING

REACH Uyumluluk Kodu

unknown

Montaj

Surface Mount

Transistor Application

SWITCHING

RoHS Durumu

RoHS Compliant

Max Power Dissipation

500mW

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Element Configuration

Dual

Kurşunsuz Kodu

yes

Fet Feature

Standard

Ambalaj

Tube

Parça Durumu

Obsolete

Power Dissipation

500mW

Gate To Source Voltage Vgs

10.6V

Rds On Max Id Vgs

500 Ω @ 5.9V

Input Capacitance Ciss Max Vds

2.5pF @ 5V

Kılıf / Paket

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Montaj Tipi

Surface Mount

ECCN Kodu

EAR99

Number Of Elements

2

Jesd30 Code

R-PDSO-G8

Çalışma Sıcaklığı

0°C~70°C TJ

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgsth Max Id

3.35V @ 1μA