ALD1115SAL

Teknik Özellikler

Number Of Elements

2

ECCN Kodu

EAR99

Montaj Tipi

Surface Mount

Çalışma Sıcaklığı

0°C~70°C TJ

Vgsth Max Id

1V @ 1μA

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drain To Source Voltage Vdss

10.6V

Fet Feature

Standard

Ambalaj

Tube

Gate To Source Voltage Vgs

13.2V

Parça Durumu

Active

Power Dissipation

500mW

Drainsource On Resistancemax

500Ohm

Rds On Max Id Vgs

1800 Ω @ 5V

Input Capacitance Ciss Max Vds

3pF @ 5V

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Drain To Source Breakdown Voltage

-12V

Terminal Formu

GULL WING

Pin Sayısı

8

Transistor Application

SWITCHING

REACH Uyumluluk Kodu

unknown

Montaj

Surface Mount

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Max Power Dissipation

500mW

RoHS Durumu

ROHS3 Compliant

Kurşunsuz Kodu

yes

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Element Configuration

Dual

Operating Mode

ENHANCEMENT MODE

Continuous Drain Current Id

-2mA

Yayın Yılı

2006

Terminal Sayısı

8

Fabrika Tedarik Süresi

8 Weeks

Fet Type

N and P-Channel Complementary

Transistor Element Material

SILICON