ALD1115PAL

Teknik Özellikler

Vgsth Max Id

1V @ 1μA

Nem Hassasiyeti (MSL)

1 (Unlimited)

Çalışma Sıcaklığı

0°C~70°C TJ

Number Of Elements

2

ECCN Kodu

EAR99

Montaj Tipi

Through Hole

Kılıf / Paket

8-DIP (0.300, 7.62mm)

Drainsource On Resistancemax

500Ohm

Input Capacitance Ciss Max Vds

3pF @ 5V

Rds On Max Id Vgs

1800 Ω @ 5V

Gate To Source Voltage Vgs

13.2V

Parça Durumu

Active

Power Dissipation

500mW

Drain To Source Voltage Vdss

10.6V

Fet Feature

Standard

Ambalaj

Tube

Kurşunsuz Kodu

yes

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Element Configuration

Dual

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Max Power Dissipation

500mW

RoHS Durumu

ROHS3 Compliant

Transistor Application

SWITCHING

Pin Sayısı

8

Montaj

Through Hole

REACH Uyumluluk Kodu

unknown

Drain To Source Breakdown Voltage

-12V

Terminal Sayısı

8

Fabrika Tedarik Süresi

8 Weeks

Fet Type

N and P-Channel Complementary

Transistor Element Material

SILICON

Yayın Yılı

2006

Operating Mode

ENHANCEMENT MODE

Continuous Drain Current Id

2mA