ALD1107PBL

Teknik Özellikler

Rds On Max Id Vgs

1800 Ω @ 5V

Input Capacitance Ciss Max Vds

3pF @ 5V

Kılıf / Paket

14-DIP (0.300, 7.62mm)

Drain To Source Voltage Vdss

10.6V

Ambalaj

Tube

Fet Feature

Standard

Gate To Source Voltage Vgs

-13.2V

Power Dissipation

500mW

Parça Durumu

Active

Çalışma Sıcaklığı

0°C~70°C TJ

Terminal Pozisyonu

DUAL

Vgsth Max Id

1V @ 1μA

Nem Hassasiyeti (MSL)

1 (Unlimited)

Number Of Elements

4

ECCN Kodu

EAR99

Montaj Tipi

Through Hole

Configuration

COMMON SUBSTRATE, 4 ELEMENTS

Terminal Sayısı

14

Fabrika Tedarik Süresi

8 Weeks

Fet Type

4 P-Channel, Matched Pair

Transistor Element Material

SILICON

Operating Mode

ENHANCEMENT MODE

Continuous Drain Current Id

2mA

Yayın Yılı

2012

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Max Power Dissipation

500mW

RoHS Durumu

ROHS3 Compliant

Kurşunsuz Kodu

yes

Drain To Source Breakdown Voltage

-12V

Transistor Application

SWITCHING

Pin Sayısı

14

Montaj

Through Hole

REACH Uyumluluk Kodu

unknown