MRF9045LR1

Teknik Özellikler

Vgs Gatesource Voltage

15 V

Forward Transconductance Min

3 S

Case Connection

SOURCE

Nominal Gerilim

65V

Terminal Sayısı

2

Transistor Polarity

N-Channel

Yüzey Montaj

YES

Technology

Si

Jesd30 Code

R-CDFM-F2

Tip

RF Power MOSFET

Polaritychannel Type

N-CHANNEL

Voltage Test

28V

Ds Breakdown Voltagemin

65V

Transistor Element Material

SILICON

Operating Frequency

945 MHz

Nem Hassasiyeti (MSL)

3 (168 Hours)

Parça Durumu

Obsolete

Gain

18.8 dB

Id Continuous Drain Current

4.25 A

Pd Power Dissipation

117 W

RoHS

Details

Current Test

350mA

Yayın Yılı

2002

Temel Parça No

MRF9045

RoHS Durumu

ROHS3 Compliant

Operating Mode

ENHANCEMENT MODE

Vds Drainsource Breakdown Voltage

65 V

Power Output

45W

Frekans

945MHz

Configuration

Single

Output Power

60 W

Kılıf / Paket

NI-360

Ambalaj

Tray

Birim Ağırlık

0.032480 oz

Number Of Elements

1

Terminal Pozisyonu

DUAL

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Vgs Th Gatesource Threshold Voltage

4.8 V

Terminal Formu

FLAT

Ürün Tipi

RF MOSFET Transistors