BLV31

Teknik Özellikler

Maks. Çalışma Sıcaklığı

+ 200 C

RoHS

Details

Dc Current Gainmin Hfe

15

Minimum Operating Temperature

- 65 C

Collector Currentmax Ic

3 A

REACH Uyumluluk Kodu

unknown

Operating Temperaturemax

200 °C

Yüzey Montaj

NO

Collectoremitter Voltagemax

30 V

Polaritychannel Type

NPN

Jesd30 Code

O-CRPM-F4

Transistor Element Material

SILICON

Maximum Dc Collector Current

6 A

Operating Frequency

224 MHz

Risk Rank

4.22

Ürün Tipi

RF Bipolar Transistors

Package Description

POST/STUD MOUNT, O-CRPM-F4

Dc Collectorbase Gain Hfe Min

15

Ihs Manufacturer

ASI SEMICONDUCTOR INC

Üretici Parça No

BLV31

Terminal Pozisyonu

RADIAL

ECCN Kodu

EAR99

Package Shape

ROUND

Highest Frequency Band

VERY HIGH FREQUENCY BAND

Montaj Stili

Through Hole

Emitter Base Voltage Vebo

4 V

Transistor Polarity

NPN

Package Body Material

CERAMIC, METAL-SEALED COFIRED

Transistor Application

AMPLIFIER

Collector Emitter Voltage Vceo Max

30 V

Part Life Cycle Code

Active

Power Dissipationmax Abs

48 W

Continuous Collector Current

3 A

Qualification Status

Not Qualified

Terminal Formu

FLAT

Number Of Terminals

4

Kılıf / Paket

SOT-122A

Ambalaj

Tray

Technology

Si

Pd Power Dissipation

7 W